2011 · 11 citations · 11 references
EngineeringComputer EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignDevice CharacterizationDevice ModelingDevice ScalingDevice SimulationIntegrated Circuit DesignIntegrated Circuit DevicesDevice OptimizationHigh PerformanceMetal-oxide-semiconductor Field-effect Transistor ModelingSemiconductor Device CharacterizationSiliconSilicon Device SimulationSilicon-on-insulator CmosSilicon-on-insulator Technology
Modeling challenges and solutions for silicon based high performance device options at the 14nm node are presented. A variety of devices are being considered, using a variety of methods to analyze the devices objectively. Partially depleted silicon on insulator (PDSOI) devices are compared against extremely thin (ETSOI) and FinFET devices.
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Silicon CMOS devices beyond scaling
Wilfried Haensch, E. Nowak, R.H. Dennard et al. · IBM Journal of Research and Development · 2006 · 455 citations
Engineering, Computer Engineering, Electrical Engineering +17
The effective drive current in CMOS inverters
Mulun Na, E. Nowak, Wilfried Haensch et al. · 2003 · 238 citations
Engineering, Computer Engineering, Electrical Engineering +17
Modeling line edge roughness effects in sub 100 nanometer gate length devices
P. Oldiges, Qimghuamg Lin, Karen Petrillo et al. · 2002 · 112 citations