Concepedia

Silicon Device Simulation

Silicon Device Simulation is a computational modeling methodology within semiconductor device simulation that specifically characterizes the electrical, thermal, and quantum mechanical behavior of devices fabricated from silicon-based materials, distinguished by its focus on the unique material properties and process technologies associated with silicon.

484

Publications

17.1K

Citations

1.7K

Authors

499

Institutions

Publications per year

2017–2026

54

Parents

Publications

484

Double-gate silicon-on-insulator transistor with volume inversion: A new device with greatly enhanced performance

F. Balestra, S. Cristoloveanu, M. Benachir et al. · IEEE Electron Device Letters · 1987 · 750 citations

, , +17

Equivalent-circuit model of the squeezed gas film in a silicon accelerometer

Timo Veijola, Heikki Kuisma, Juha Lahdenperä et al. · Sensors and Actuators A Physical · 1995 · 463 citations

, , +16

Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation

Andreas Schenk · Journal of Applied Physics · 1998 · 347 citations

, , +17

Transient Simulation of Silicon Devices and Circuits

Randolph E. Bank, W.M. Coughran, Wolf Fïchtner et al. · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1985 · 303 citations

, , +17

A simple model for quantisation effects in heavily-doped silicon MOSFETs at inversion conditions

M.J. van Dort, P.H. Woerlee, Andrew J. Walker · Solid-State Electronics · 1994 · 273 citations

, , +17

1–5 of 484

Authors

1.7K

  1. PP
    Pietro P. Altermatt

    Leibniz University Hannover, Germany

    8 publications · 604 citations

    8

    h-index

  2. RD
    R.W. Dutton

    Stanford University, United States

    8 publications · 308 citations

    8

    h-index

  3. AT
    A.F. Tasch

    The University of Texas at Austin, United States

    8 publications · 248 citations

    8

    h-index

  4. MG
    Marc Gaillardin

    Commissariat à l'Énergie Atomique et aux Énergies Alternatives, France

    6 publications · 251 citations

    6

    h-index

  5. MR
    M. Raine

    Commissariat à l'Énergie Atomique et aux Énergies Alternatives, France

    6 publications · 251 citations

    6

    h-index

1–5 of 1.7K

Institutions

499

  1. IBM (United States)

    Armonk, United States

    15 h-index

    46 publications

    1.5K citations

  2. Stanford University

    Stanford, United States

    13 h-index

    38 publications

    1.1K citations

  3. University of Bologna

    Bologna, Italy

    12 h-index

    28 publications

    1K citations

  4. Centre National de la Recherche Scientifique

    Paris, France

    12 h-index

    45 publications

    4.7K citations

  5. Commissariat à l'Énergie Atomique et aux Énergies Alternatives

    Paris, France

    12 h-index

    45 publications

    1.4K citations

  6. The University of Texas at Austin

    Austin, United States

    10 h-index

    41 publications

    1.3K citations

  7. UNSW Sydney

    Sydney, Australia

    9 h-index

    16 publications

    896 citations

  8. Fraunhofer Institute for Solar Energy Systems

    Freiburg im Breisgau, Germany

    9 h-index

    25 publications

    1.5K citations

1–8 of 499

Venues

  1. IEEE Transactions on Electron Devices

    56 publications · 2.1K citations

    29

    h-index

  2. Journal of Applied Physics

    32 publications · 1.6K citations

    20

    h-index

  3. 14

    h-index

  4. 14

    h-index

  5. IEEE Transactions on Nuclear Science

    14 publications · 515 citations

    13

    h-index

1–5