IEEE Electron Device Letters · 1988 · 129 citations · 14 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDevice CharacterizationDevice ModelingDevice SimulationElectronic Transport ModelingSemiconductor PhysicsShort-channel EffectsBand Structure CalculationCarrier Velocity OvershootElectron ScatteringMetal-oxide-semiconductor Field-effect Transistor ModelingMonte Carlo Device SimulationMosfet ModelingOvershootSilicon Device Simulation
Monte Carlo simulation results for small silicon n-MOSFETs at 77 and 300 K are presented. A complete description of the silicon band structure including consistent scattering rates, electron-electron scattering, and plasma effects is included in the calculation for the first time. The dependence of transconductance on channel length is in excellent agreement with the experiments of G.A. Sai-Halasz et al. (see ibid., vol.EDL-8, p.463-6, Oct. 1987 and ibid., vol.EDL-9, p.464-6, Sep. 1988) and serves to support the expectation of significant velocity overshoot in these devices. For extremely short channels (<or=0.1 mu m) at 77 K, electron-electron scattering plays a significant role in determining the electron energy distribution, while at drain biases exceeding about 1.5 V, band structure effects can play an important role.<<ETX>>
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