IEEE Electron Device Letters · 2000 · 14 citations · 6 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesVlsi DesignCmos Circuit DesignImplantable MicrosystemsIntegrated Circuit DesignPhysical DesignVoltage ScalingHigh PerformanceLow-voltage Cmos DesignThreshold VoltageThreshold Voltage ScalingUltra-low-voltage Circuit Design
We demonstrate a high-performance 0.1 μm dynamic threshold voltage MOSFET (DTMOS) for ultra-low-voltage (i.e., <0.7 V) operations. Devices are realized by using super-steep-retrograde indium-channel profile. The steep indium-implanted-channel DTMOS can achieve a large body-effect-factor and a low V/sub th/ simultaneously, which results in an excellent performance for the indium-implanted DTMOS.
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A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation
F. Assaderaghi, D. Sinitsky, S. Parke et al. · 2002 · 212 citations