Chun-Yen Chang

5 mm high-power-density dual-delta-doped power HEMT's for 3 V L-band applications

Yeong-Lin Lai, Edward Yi Chang, Chun-Yen Chang et al. · IEEE Electron Device Letters · 1996 · 40 citations

Engineering, Electrical Engineering, Materials Science +17

Experimental 0.1 mu m p-channel MOSFET with p/sup +/-polysilicon gate on 35 AA gate oxide

Sidney Cohen, Shalom J. Wind, T. Lii et al. · IEEE Electron Device Letters · 1993 · 17 citations

Engineering, Electrical Engineering, Microelectronics +13

Reduction of source/drain series resistance and its impact on device performance for PMOS transistors with raised Si/sub 1-x/Ge_x source/drain

Hsiang-Jen Huang, Kun‐Ming Chen, Chun-Yen Chang et al. · IEEE Electron Device Letters · 2000 · 17 citations

Engineering, Electrical Engineering, Materials Science +15

High performance 0.1 /spl mu/m dynamic threshold MOSFET using indium channel implantation

Sun-Jay Chang, Chun-Yen Chang, Tien‐Sheng Chao et al. · IEEE Electron Device Letters · 2000 · 14 citations

Engineering, Electrical Engineering, Microelectronics +12

Silicon integrated high performance inductors in a 0.18 μm CMOS technology for MMIC

Heng-Ming Hsu, Jiong-Guang Su, Shyh-Chyi Wong et al. · 2002 · 14 citations

Engineering, Electrical Engineering, Microelectronics +16