T. Lii

A high performance 1.8 V, 0.20 μm CMOS technology with copper metallization

S. Venkatesan, A. V. Gelatos, S. Hisra et al. · 2002 · 101 citations

Engineering, Computer Engineering, Electrical Engineering +17

Experimental high performance sub-0.1 /spl mu/m channel nMOSFET's

Y. J. Mii, S. A. Rishton, D. P. Kern et al. · IEEE Electron Device Letters · 1994 · 51 citations

Engineering, Electrical Engineering, Microelectronics +11

Fabrication of CMOS on ultrathin SOI obtained by epitaxial lateral overgrowth and chemical-mechanical polishing

G. Shahidi, B. Davari, J. Warnock et al. · 2002 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Inductively coupled, point-of-use plasma abatement of perfluorinated compounds and hydrofluorinated compounds from etch processes utilizing O2 and H2O as additive gases

Eric J. Tonnis, David B. Graves, Victor Vartanian et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2000 · 27 citations

Engineering, Chemical Engineering, Environmental Engineering +16

A High Speed, Low Power P-Channel Flash EEPROM Using Silicon Rich Oxide as Tunneling Dielectric

Chih-Wei Hsu, A. Acovic, L. Dori et al. · 1992 · 19 citations

Engineering, Computer Engineering, Electrical Engineering +14