IEEE Electron Device Letters · 1996 · 40 citations · 7 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsHigh-frequency Semiconductor DevicesIii-v SemiconductorsSemiconductor Device MaterialsSemiconductor PhysicsWide Band Gap SemiconductorsWide-bandgap Semiconductor DevicesClass Ab AmplifiersClass Ab Power AmplifiersCurrent DensityHeterostructure Field-effect TransistorsHigh-electron-mobility TransistorsPower OutputTransconductanceWide Bandgap Semiconductor Applications
A high-power-density dual-/spl delta/-doped AlGaAs-InGaAs-GaAs high electron mobility transistor (HEMT) for personal communication applications has been developed. A 5.0 mm gate-width device operating at a drain bias of 3.0 V gave an output power over 1 W. The 1 μm gate-length HEMT exhibited a current density of 425 mA/mm at V/sub gs/=0.5 V. The maximum transconductance of the device was 270 mS/mm. The effective knee voltage was as low as 0.3 V. At the class AB operation, the HEMT demonstrated an output power density of 200 mW/mm, 64% power-added efficiency and 18.2 dB linear gain at 900 MHz. This is the highest power density of a dual-/spl delta/-doped AlGaAs-InGaAs-GaAs HEMT reported to date for low voltage (3 V) wireless applications."
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