Haecheon Kim - Concepedia

Author

Haecheon Kim

Electronics and Telecommunications Research Institute

Also Known As

Haecheon Kim, Haecheon Kim Kim

Publications

375

Citations

H-Index

Concepts

All Affiliations

Electronics and Telecommunications Research Institute Korea Atomic Energy Research Institute Pohang University of Science and Technology Uiduk University Kyungpook National University

About

Haecheon Kim is an author at Electronics and Telecommunications Research Institute specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	10	11	209
2	Electrical Engineering	9	9	147
3	Applied Physics	6	6	103
4	Materials Engineering	2	2	26
5	Computer Engineering	1	1	36

Haecheon Kim

Publications

243

Citations

H-Index

Page 1

	Year	Citations
A 28.5–32-GHz Fast Settling Multichannel PLL Synthesizer for 60-GHz WPAN Radio Ja‐Yol Lee, Sang‐Heung Lee, Haecheon Kim, IEEE Transactions on Microwave Theory and Techniques Wireless Communications60-Ghz Wpan RadioEngineeringOscillatorsHigh-frequency Device	2008	36
2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency Jong‐Lam Lee, Haecheon Kim, Jae Kyoung Mun, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringElectronic EngineeringPower Semiconductor Device	1994	29
Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate Hyung Sup Yoon, Byoung‐Gue Min, Jong Min Lee, IEEE Electron Device Letters Maximum Extrinsic TransconductanceWide-bandgap SemiconductorElectrical EngineeringEngineeringMicrowave Low-noise Performance	2016	28
Investigation of the bonding states of the SiO2 aerogel film/metal interface Sang-Bae Jung, Hyung‐Ho Park, Haecheon Kim Thin Solid Films Materials ScienceEngineeringSurface ScienceApplied PhysicsSilicene	2003	26
A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications Jong‐Lam Lee, Jae Kyoung Mun, Haecheon Kim, IEEE Transactions on Electron Devices Low-power ElectronicsElectrical EngineeringEngineeringPower DeviceKnee Voltage	1996	19
Application of SiO2 aerogel film for interlayer dielectric on GaAs with a barrier of Si3N4 Sang-Bae Jung, Sung-Woo Park, Jun-Kyu Yang, Thin Solid Films Materials EngineeringMaterials ScienceElectrical EngineeringEngineeringSilicon On Insulator	2004	14
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric Layer Sung‐Jae Chang, Dong‐Seok Kim, Tae‐Woo Kim, Nanomaterials	2020	14
Pd/Ge/Ti/Au ohmic contact to AlGaAs/InGaAs pseudomorphic high electron mobility transistor with an undoped cap layer Yi-Tae Kim, Jong‐Lam Lee, Jae Kyoung Mun, Applied Physics Letters SemiconductorsSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	1997	12
Fabrication and characteristics of 0.12 µm AlGaAs/InGaAs/GaAs pseudomorphic HEMT using a silicon nitride assisted process Jong‐Won Lim, Ho‐Kyun Ahn, Hong‐Gu Ji, Semiconductor Science and Technology Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideEngineering	2004	12
Single Supply, High Linearity, High Efficient PHEMT Power Devices and Amplifier for 2 GHz &amp; 5 GHz WLAN Applications Min‐Sik Park, Ho‐Kyun Ahn, Dong Min Kang, Low-power ElectronicsElectrical EngineeringEngineeringRf SemiconductorPower Device	2003	12

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