Hyung Sup Yoon

Microwave Low-Noise Performance of $0.17~\mu \text{m}$ Gate-Length AlGaN/GaN HEMTs on SiC With Wide Head Double-Deck T-Shaped Gate

Hyung Sup Yoon, Byoung‐Gue Min, Jong Min Lee et al. · IEEE Electron Device Letters · 2016 · 28 citations

Maximum Extrinsic Transconductance, Wide-bandgap Semiconductor, Electrical Engineering +14

Structure and electrical resistivity of low pressure chemical vapor deposited silicon

Hyung Sup Yoon, Chul Soon Park, Sin‐Chong Park · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 15 citations

Materials Science, Electrical Engineering, Engineering +15

A 77GHz automotive radar MMIC chip set fabricated by a 0.15/spl mu/m MHEMT technology

Dong Min Kang, Ju Hong, Jae Yeob Shim et al. · IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 13 citations

Radar, Electrical Engineering, Millimeter Wave Technology +12

0.15 μm gate length InAlAs/InGaAs power metamorphic HEMT on GaAs substrate with extremely low noise characteristics

Hyung Sup Yoon, Jin Hee Lee, Jae Yeob Shim et al. · 2003 · 13 citations

Engineering, Gaas Substrate, Power Electronics +16

The effects of tetramethylammonium hydroxide treatment on the performance of recessed-gate AlGaN/GaN high electron mobility transistors

Jae-Won Do, Hyun‐Wook Jung, Min Jeong Shin et al. · Thin Solid Films · 2017 · 10 citations