A 77GHz automotive radar MMIC chip set fabricated by a 0.15/spl mu/m MHEMT technology

Abstract

A MMIC chip set consisting of a power amplifier, a driver amplifier, low noise amplifier, and a frequency doubler has been developed for automotive radar systems at 77GHz. The chip set was fabricated using 0.15 /spl mu/m gate-length InGaAs/InAlAs/GaAs mHEMT process based on 4-inch substrate. The power amplifier demonstrated a measured small signal gain of over 20 dB from 76-77GHz with 15.5 dBm output power. The chip size is 2mm /spl times/ 2mm. The driver amplifier exhibited a gain of 23dB over a 76-77 GHz band with an output power of 13dBm. The chip size is 2.1mm /spl times/ 2mm. The low noise amplifier achieved a gain of 20 dB in a band between 76-77GHz with an output power of 10 dBm. The chip size is 2.2mm /spl times/ 2mm. The frequency doubler achieved an output power of -6 dBm at 76.5 GHz with a conversion gain of -16dB for an input power of 10 dBm and a 38.25 GHz input frequency. The chip size is 1.2 mm /spl times/ 1.2mm. This MMIC chip set is suitable for the 77 GHz automotive radar systems and related applications in W-band.