Jae Kyoung Mun

Statistics

Publications

Citations

300

H-Index

Active since

1994

Affiliations

Electronics and Telecommunications Research Institute(Current)

Pohang University of Science and Technology

Jae Kyoung Mun is an author at Electronics and Telecommunications Research Institute specializing in semiconductor devices, semiconductor materials, and engineering.

ORCID

Publications per year

1994–2023

Publications

Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga<sub>2</sub>O<sub>3</sub> MOSFETs with Source-Connected Field Plate

Jae Kyoung Mun, Kyujun Cho, Woojin Chang et al. · ECS Journal of Solid State Science and Technology · 2019 · 137 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency

Jong‐Lam Lee, Haecheon Kim, Jae Kyoung Mun et al. · IEEE Electron Device Letters · 1994 · 29 citations

Engineering, Electrical Engineering, Microelectronics +13

Low onset voltage of GaN on Si Schottky barrier diode using various recess depths

Young‐Rak Park, Jung‐Jin Kim, Woojin Chang et al. · Electronics Letters · 2014 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +16

A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications

Jong‐Lam Lee, Jae Kyoung Mun, Haecheon Kim et al. · IEEE Transactions on Electron Devices · 1996 · 19 citations

Engineering, Electrical Engineering, Microelectronics +10

Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs

Jong‐Lam Lee, Jae Kyoung Mun, Byung‐Teak Lee · Journal of Applied Physics · 1997 · 18 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

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