Jae Kyoung Mun

Editors' Choice—2.32 kV Breakdown Voltage Lateral β-Ga₂O₃ MOSFETs with Source-Connected Field Plate

Jae Kyoung Mun, Kyujun Cho, Woojin Chang et al. · ECS Journal of Solid State Science and Technology · 2019 · 133 citations · Full text

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +15

2.9 V operation GaAs power MESFET with 31.5-dBm output power and 64% power-added efficiency

Jong‐Lam Lee, Haecheon Kim, Jae Kyoung Mun et al. · IEEE Electron Device Letters · 1994 · 29 citations

Semiconductor Technology, Electrical Engineering, Engineering +8

Low onset voltage of GaN on Si Schottky barrier diode using various recess depths

Young‐Rak Park, Jung‐Jin Kim, Woojin Chang et al. · Electronics Letters · 2014 · 20 citations · Full text

Low Onset Voltage, Wide-bandgap Semiconductor, Electrical Engineering +8

A 68% PAE, GaAs power MESFET operating at 2.3 V drain bias for low distortion power applications

Jong‐Lam Lee, Jae Kyoung Mun, Haecheon Kim et al. · IEEE Transactions on Electron Devices · 1996 · 19 citations

Low-power Electronics, Electrical Engineering, Engineering +9

Thermal degradation mechanism of Ti/Pt/Au Schottky contact to n-type GaAs

Jong‐Lam Lee, Jae Kyoung Mun, Byung‐Teak Lee · Journal of Applied Physics · 1997 · 18 citations · Full text

Materials Science, Semiconductors, Electrical Engineering +14