Low onset voltage of GaN on Si Schottky barrier diode using various recess depths

Abstract

A low onset voltage AlGaN/GaN diode with a width of 14 mm is achieved. The recess depth of the AlGaN layer is responsible for the low onset voltage. In comparison with the conventional non‐recessed diode, the onset voltage reduces by 45% along with a decrease of reverse leakage current by about one order of magnitude.