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Advanced technologies of low-power GaAs ICs and power modules for cellular telephones
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2003
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Low-power ElectronicsElectrical EngineeringEngineeringRf SemiconductorPower IcHigh-frequency DeviceElectronic EngineeringAdvanced TechnologiesMixed-signal Integrated CircuitPower Splitter IcComputer EngineeringGaas MesfetsPower ElectronicsMicroelectronicsLow-power Gaas IcsCellular TelephonesElectronic Circuit
Low-power GaAs ICs and power modules have been developed for 150-cc-type cellular telephones. The front-end IC and power splitter IC can operate under 3 V, and the dissipation current is only half that of Si bipolar ICs. The front-end IC, consisting of a low-noise amplifier, local amplifier, and downconverter, shows a conversion gain of 22 dB at a local power of -15 dBm. The power splitter IC, used in dividing the output power of the voltage-controlled oscillator and supplying the local power to two mixers, shows an output power of 0 dBm and internal isolation of over 25 dB. The power module as a transmitter, composed of a two-stage hybrid amplifier using GaAs MESFETs, can operate at 4.7 V and deliver an output power of 1.5 W at f=950 MHz.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>