2002 · 49 citations · 6 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsDopingHigh-frequency Semiconductor DevicesIii-v SemiconductorsMicrowave Semiconductor DevicesSemiconductor PhysicsWide Band Gap SemiconductorsBreakdown VoltageHeterostructure Field-effect TransistorsHeterostructure TransistorsHigh-voltage BreakdownMaximum OutputMaximum Power OutputPower OutputTransconductance
The microwave power performance of double-doped AlGaAs/InGaAs/GaAs pseudomorphic heterojunction field-effect transistors (HJFETs) operated at a DC drain bias of 3 V is presented. The fabricated 1.1- mu m-gate-length HJFET with an undoped AlGaAs Schottky layer exhibited a maximum drain current of 220 mA/mm, a peak transconductance of 200 mS/mm, and a gate-to-drain breakdown voltage of 21 V. Power performance evaluated at a 3-V drain bias for a 12-mm-gate-periphery device demonstrated a maximum output power of 1.4 W with a 61% power-added efficiency at 950 MHz. The results indicate that the double-doped pseudomorphic HJFETs have a high potential for battery-operated portable power applications.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Control of gate&#8212;Drain avalanche in GaAs MESFET's
S. H. Wemple, W.C. Niehaus, H. M. Cox et al. · IEEE Transactions on Electron Devices · 1980 · 130 citations
Power performance of microwave high-electron mobility transistors
P.M. Smith, Umesh K. Mishra, P.C. Chao et al. · IEEE Electron Device Letters · 1985 · 20 citations