Chemical Vapor Deposition · 2006 · 63 citations · 98 references
Natural SciencesMaterials EngineeringMaterials ScienceMaterials ChemistrySemiconductor MaterialsThin FilmsAtomic Layer DepositionDielectricsMetal OxidesOxide SemiconductorsSemiconductor Device MaterialsThin Film Electrical PropertiesHigh-dielectric-constant MaterialsHigh-k DielectricsHigh-permittivity MaterialsInsulating MaterialsOxide DielectricsPhysical PropertiesPrecursor DesignProcess Parameters
Abstract A number of high‐permittivity (κ) dielectric oxides are currently being investigated as alternatives to SiO 2 as the dielectric insulating layer in sub‐0.1 μm CMOS technology. Metal‐organic (MO)CVD and atomic layer deposition (ALD) are promising techniques for the deposition of these high‐κ dielectric oxides. In this paper it is shown how the use of “designed” metal alkoxide precursors, containing bidentate donor‐functionalized alkoxide ligands, in MOCVD leads to a marked improvement in the physical properties of the MOCVD precursors and process parameters. However, the use of such ligands is not as beneficial in the ALD process, highlighting the very different requirements of MOCVD and ALD precursors.
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Atomic layer deposition of transition metals
Booyong S. Lim, Antti Rahtu, Roy G. Gordon · Nature Materials · 2003 · 656 citations
Natural Sciences, Materials Engineering, Materials Science +11