Concepedia

Ultra-thin body fully-depleted SOI devices with metal gate (TaSiN) gate, high K (HfO/sub 2/) dielectric and elevated source/drain extensions

Vandooren, Egley, Zavala, Franke, Barr, White, Samavedam, Mathew Mathew, Schaeffer, Pham,

2002 · 13 citations · 6 references

Concepts

Low-power ElectronicsElectrical EngineeringMetal GateSource/drain ExtensionsElevated Source/drain ExtensionsEngineeringNanoelectronicsBias Temperature InstabilityApplied PhysicsElectrical CharacterizationHigh KSilicon On InsulatorMicroelectronicsSemiconductor DeviceTasin Gate

Abstract

We report for the first time physical and electrical characterization of ultra-thin (<100-150A) Fully-Depleted Silicon-On-Insulator (SOI) n and pMOSFETs using TaSiN gate and HfO/sub 2/ dielectric with elevated Source/Drain extensions.

References

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Device Modeling, Semiconductor Technology, Electrical Engineering +10