M. Mastrapasqua

Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

David Esseni, M. Mastrapasqua, G. K. Celler et al. · IEEE Transactions on Electron Devices · 2001 · 137 citations · Full text

Engineering, Electrical Engineering, Physics +17

An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

David Esseni, M. Mastrapasqua, G. K. Celler et al. · IEEE Transactions on Electron Devices · 2003 · 117 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Low field mobility of ultra-thin SOI N- and P-MOSFETs: Measurements and implications on the performance of ultra-short MOSFETs

David Esseni, M. Mastrapasqua, G. K. Celler et al. · 2002 · 87 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Impact ionization and distribution functions in sub-micron nMOSFET technologies

J. Bude, M. Mastrapasqua · IEEE Electron Device Letters · 1995 · 68 citations

Engineering, Electrical Engineering, Electronic Materials +16

Secondary Electron flash-a high performance, low power flash technology for 0.35 μm and below

J. Bude, M. Mastrapasqua, M.R. Pinto et al. · 2002 · 60 citations

Engineering, Computer Engineering, Computer Systems +14