IEEE Transactions on Electron Devices · 2002 · 22 citations · 11 references
EngineeringElectrical EngineeringCircuit TheoryMicroelectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice SimulationDopingShort-channel EffectsChannel EngineeringMosfet ModelingThreshold VoltageThreshold Voltage ExtractionThreshold Voltage Modeling
A new threshold voltage (V/sub th/) model has been developed for the pocket-implant technology. The model extracts the threshold condition from the entire mobile charge concentration in the channel with only five additional parameters; the maximum doping concentration (N/sub subp/) of the pocket profile, the penetration length (L/sub p/) into the channel, and three enhanced short-channel parameters. The model reproduces the measured V/sub th/ versus. gate-length (L/sub gate/) characteristics with an average error of a few millivolts under any bias conditions.
11
CMOS devices below 0.1 μm: how high will performance go?
Yuan Taur, E. Nowak · 2002 · 99 citations
Engineering, Computer Engineering, Electrical Engineering +12
50 nm gate-length CMOS transistor with super-halo: design, process, and reliability
Bin Yu, Haihong Wang, O. Milic et al. · 2003 · 47 citations