A. Rahm - Concepedia

Author

A. Rahm

Leipzig University ORCID

Also Known As

A Rahm, A. Rahm, A.A. Rahm, Andreas Rahm, Braun, A., Eisenbarth, T., Englisch, S., Kessler, F., Pelz, K., Puttnins, S.

Publications

2.8K

Citations

H-Index

Concepts

All Affiliations

Leipzig University Helmholtz-Zentrum Berlin für Materialien und Energie University of Aveiro University of Jinan Technische Universität Berlin

About

A. Rahm is an author at Leipzig University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	24	36	2.6K
2	Applied Physics	23	33	2.5K
3	Natural Sciences	3	3	133
4	Chemistry	3	3	155
5	Chemical Engineering	2	2	40

A. Rahm

Publications

2.6K

Citations

H-Index

Page 1

	Year	Citations
High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition Michael Lorenz, Holger von Wenckstern, A. Rahm, Applied Physics Letters Materials ScienceEpitaxial GrowthEngineeringNanotechnologyOxide Electronics	2003	628
Whispering Gallery Modes in Nanosized Dielectric Resonators with Hexagonal Cross Section Thomas Nobis, A. Rahm, Michael Lorenz, Physical Review Letters EngineeringCavity QedOptomechanicsMicro-optical ComponentElectromagnetic Metamaterials	2004	305
Mg x Zn 1 − x O ( 0 ⩽ x &lt; 0.2 ) nanowire arrays on sapphire grown by high-pressure pulsed-laser deposition Michael Lorenz, A. Rahm, Th. Nobis, Applied Physics Letters Materials ScienceMg Content XAdvanced Laser ProcessingEngineeringNanotechnology	2005	192
Dielectric functions (1 to 5 eV) of wurtzite MgxZn1−xO (x⩽0.29) thin films R. Schmidt, B. Rheinländer, M. Schubert, Applied Physics Letters Optical MaterialsEngineeringThin Film Process TechnologyDielectric FunctionsIi-vi Semiconductor	2003	170
Optical and electrical properties of epitaxial (Mg,Cd)xZn1−xO, ZnO, and ZnO:(Ga,Al) thin films on c-plane sapphire grown by pulsed laser deposition Michael Lorenz, Holger von Wenckstern, V. Riede, Solid-State Electronics Materials ScienceElectrical EngineeringOptical MaterialsEngineeringEpitaxial Growth	2003	142
Unified complete MOSFET model for analysis of digital and analog circuits M. Miura–Mattausch, Uwe Feldmann, A. Rahm, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems EngineeringVlsi DesignAnalog DesignPower ElectronicsPhysical Design (Electronics)	1996	132
Phosphorus acceptor doped ZnO nanowires prepared by pulsed-laser deposition Bingqiang Cao, Michael Lorenz, A. Rahm, Nanotechnology Optical MaterialsEngineeringOptoelectronic DevicesChemistryP Nanowires	2007	110
Infrared optical properties of MgxZn1−xO thin films (0⩽x⩽1): Long-wavelength optical phonons and dielectric constants Carsten Bundesmann, A. Rahm, Michael Lorenz, Journal of Applied Physics Infrared Spectroscopic EllipsometryCrystal StructureOptical MaterialsEngineeringCrystal Growth Technology	2006	87
Whispering gallery modes in zinc oxide micro‐ and nanowires Christian Czekalla, Thomas Nobis, A. Rahm, physica status solidi (b) Materials SciencePhotonicsWgm ResonancesOptical MaterialsEngineering	2010	87
Spatially Inhomogeneous Impurity Distribution in ZnO Micropillars Thomas Nobis, A. Rahm, Michael Lorenz, Nano Letters Materials ScienceAdvanced Laser ProcessingOptical MaterialsInhomogeneous Impurity DistributionEngineering	2004	78

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