26
Publications
1.3K
Citations
18
H-Index
1994
Active since
Haihong Wang is an author at Advanced Micro Devices (United States) specializing in engineering, microelectronics, and applied physics.
Top concepts
EngineeringApplied PhysicsMicroelectronicsElectrical EngineeringNanoelectronicsChemistryVlsi DesignChemical EngineeringSignal ProcessingSpace Engineering
Publications per year
1994–2024
26
26
FinFET scaling to 10 nm gate length
Bin Yu, Leland Chang, Safayet Ahmed et al. · 2003 · 592 citations
15 nm gate length planar CMOS transistor
Bin Yu, Haihong Wang, Aditya Joshi et al. · 2002 · 90 citations
Limits of gate-oxide scaling in nano-transistors
Bin Yu, Haihong Wang, C. Riccobene et al. · 2002 · 62 citations
Mosfet Gate Leakage, Electrical Engineering, Nano-scale Mosfet +11
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