C. Riccobene

Limits of gate-oxide scaling in nano-transistors

Bin Yu, Haihong Wang, C. Riccobene et al. · 2002 · 62 citations

Mosfet Gate Leakage, Electrical Engineering, Nano-scale Mosfet +11

70 nm MOSFET with ultra-shallow, abrupt, and super-doped S/D extension implemented by laser thermal process (LTP)

Bin Yu, Yun Wang, Haihong Wang et al. · 2003 · 43 citations

Electrical Engineering, Engineering, Nanoelectronics +11

Operating principle of dual collector magnetotransistors studied by two-dimensional simulation

C. Riccobene, G. Wachutka, J. Bürgler et al. · IEEE Transactions on Electron Devices · 1994 · 37 citations

Device Modeling, Magnetism, Electrical Engineering +13

Investigation of strained Si/SiGe devices by MC simulation

Christoph Jungemann, Niraj Subba, Jung-Suk Goo et al. · Solid-State Electronics · 2004 · 30 citations

Device Modeling, Electrical Engineering, Engineering +7

Operating principle of dual collector magnetotransistors studied by two-dimensional simulation

C. Riccobene, G. Wachutka, J. Burgler et al. · IEEE Transactions on Electron Devices · 1994 · 27 citations

Device Modeling, Magnetism, Electrical Engineering +13