Yuan Taur

A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

Yuan Yu, Bo Yu, Jaesoo Ahn et al. · IEEE Transactions on Electron Devices · 2012 · 144 citations

Engineering, Electrical Engineering, Materials Science +17

CMOS devices below 0.1 μm: how high will performance go?

Yuan Taur, E. Nowak · 2002 · 99 citations

Engineering, Computer Engineering, Electrical Engineering +12

Modeling and Design of Ferroelectric MOSFETs

Hanping Chen, Vincent C. Lee, Atsushi Ohoka et al. · IEEE Transactions on Electron Devices · 2011 · 67 citations

Engineering, Electrical Engineering, Materials Science +17

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures

Chunmeng Dou, Dennis Lin, Abhitosh Vais et al. · Microelectronics Reliability · 2014 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

A comprehensive model on field-effect pnpn devices (Z 2 -FET)

Yuan Taur, J. Lacord, Mukta Singh Parihar et al. · Solid-State Electronics · 2017 · 24 citations · Full text

Engineering, Computer Engineering, Electrical Engineering +16