Abhitosh Vais

Determination of energy and spatial distribution of oxide border traps in In0.53Ga0.47As MOS capacitors from capacitance–voltage characteristics measured at various temperatures

Chunmeng Dou, Dennis Lin, Abhitosh Vais et al. · Microelectronics Reliability · 2014 · 32 citations

Engineering, Electrical Engineering, Materials Science +17

Gate-all-around InGaAs nanowire FETS with peak transconductance of 2200μS/μm at 50nm Lg using a replacement Fin RMG flow

Niamh Waldron, Sonja Sioncke, J. Franco et al. · 2015 · 31 citations

Engineering, Electrical Engineering, Materials Science +17

Temperature dependence of frequency dispersion in III–V metal-oxide-semiconductor C-V and the capture/emission process of border traps

Abhitosh Vais, H. C. Lin, Chunmeng Dou et al. · Applied Physics Letters · 2015 · 26 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

Abhitosh Vais, J. Franco, H. C. Lin et al. · Applied Physics Letters · 2015 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

First demonstration of III-V HBTs on 300 mm Si substrates using nano-ridge engineering

Abhitosh Vais, Liesbeth Witters, Y. Mols et al. · 2019 · 24 citations

Engineering, Electrical Engineering, Materials Science +15