Jaesoo Ahn

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

Yuan Yu, Lingquan Wang, Bo Yu et al. · IEEE Electron Device Letters · 2011 · 176 citations

Engineering, Integrated Circuits, Border Traps +16

A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

Yuan Yu, Bo Yu, Jaesoo Ahn et al. · IEEE Transactions on Electron Devices · 2012 · 143 citations

Device Modeling, Semiconductors, Electrical Engineering +13

New method for determining flat-band voltage in high mobility semiconductors

R. Winter, Jaesoo Ahn, Paul C. McIntyre et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2013 · 123 citations

Device Modeling, Semiconductors, Electrical Engineering +12

A Study on Practically Unlimited Endurance of STT-MRAM

Jimmy J. Kan, Chando Park, Chi Ching et al. · IEEE Transactions on Electron Devices · 2017 · 98 citations

Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion

Hanping Chen, Yuan Yu, Bo Yu et al. · IEEE Transactions on Electron Devices · 2012 · 70 citations

Device Modeling, Conductance–voltage Data, Electrical Engineering +13