A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

Yuan Yu, Lingquan Wang, Bo Yu, +6

IEEE Electron Device Letters

EngineeringIntegrated CircuitsBorder TrapsGate Dielectric FilmSemiconductor Device +14

A Distributed Bulk-Oxide Trap Model for $\hbox{Al}_{2} \hbox{O}_{3}$ InGaAs MOS Devices

Yuan Yu, Bo Yu, Jaesoo Ahn, +4

IEEE Transactions on Electron Devices

Device ModelingSemiconductorsElectrical EngineeringSemiconductor DeviceEngineering +11

New method for determining flat-band voltage in high mobility semiconductors

R. Winter, Jaesoo Ahn, Paul C. McIntyre, +1

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

Device ModelingSemiconductorsElectrical EngineeringSemiconductor TechnologyEngineering +10

A Study on Practically Unlimited Endurance of STT-MRAM

Jimmy J. Kan, Chando Park, Chi Ching, +4

IEEE Transactions on Electron Devices

Interface-State Modeling of $\hbox{Al}_{2}\hbox{O}_{3}$ –InGaAs MOS From Depletion to Inversion

Hanping Chen, Yuan Yu, Bo Yu, +5

IEEE Transactions on Electron Devices

Device ModelingConductance–voltage DataElectrical EngineeringEngineeringPhysics +11

Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces

Jaesoo Ahn, Tyler Kent, Evgueni Chagarov, +3

Applied Physics Letters

Materials ScienceMaterials EngineeringAluminium NitrideEpitaxial GrowthEngineering +11

Electron Mobility in Surface- and Buried-Channel Flatband $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Steven Bentley, M. Holland, Xu Li, +10

IEEE Electron Device Letters

SemiconductorsElectron DensityElectrical EngineeringWide-bandgap SemiconductorEngineering +13

Titania/alumina bilayer gate insulators for InGaAs metal-oxide-semiconductor devices

Jaesoo Ahn, I. Geppert, Marika Gunji, +4

Applied Physics Letters

Oxide HeterostructuresMaterials ScienceElectrical EngineeringSemiconductorsEngineering +13

Highly Reliable Magnetic Memory-Based Physical Unclonable Functions

Jaimin Kang, Donghyeon Han, Kyungchul Lee, +14

ACS Nano

Effects of oxide thickness and temperature on dispersions in InGaAs MOS C-V characteristics

Hanping Chen, Jaesoo Ahn, Paul C. McIntyre, +1

Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

EngineeringApparent DependenceSemiconductor DeviceSemiconductor NanostructuresSemiconductors +16