Concepedia

Chando Park

CP

Statistics

Publications

10

Citations

1.4K

H-Index

10

Active since

2006

Affiliations

Qualcomm (United States)(Current)

Applied Materials (United States)

University of California, Santa Barbara

Beihang University

Chando Park is an author at Qualcomm (United States) specializing in engineering, electrical engineering, and magnetism.

Top concepts

EngineeringElectrical EngineeringMagnetismSpintronicsApplied PhysicsMicroelectronicsMagnetic DeviceMagnetoresistive Random-access MemoryNanoelectronicsComputer Engineering

Publications per year

2006–2018

10

Publications

10

Magnetic tunnel junctions

Jian‐Gang Zhu, Chando Park · Materials Today · 2006 · 645 citations · Full text

Engineering, Magnetic Resonance, Magnetoresistance +18

Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques

Mengxing Wang, Wenlong Cai, Daoqian Zhu et al. · Nature Electronics · 2018 · 454 citations

Spin-charge-orbit Conversion, Spintronics, Magnetism +15

A Study on Practically Unlimited Endurance of STT-MRAM

Jimmy J. Kan, Chando Park, Chi Ching et al. · IEEE Transactions on Electron Devices · 2017 · 98 citations

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

Yu Lu, Tom Zhong, W.N. Hsu et al. · 2015 · 55 citations

Non-volatile Memory, Energy-efficient Iot Applications, Engineering +16

Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance

Jimmy J. Kan, Chando Park, Chi Ching et al. · 2016 · 55 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +19

Rows per page

1–5 of 10