Lingquan Wang

Border traps in Al2O3/In0.53Ga0.47As (100) gate stacks and their passivation by hydrogen anneals

Eun Ji Kim, Lingquan Wang, P.M. Asbeck et al. · Applied Physics Letters · 2010 · 181 citations

Engineering, Charge-trapping Defects, Border Traps +16

A Distributed Model for Border Traps in $\hbox{Al}_{2} \hbox{O}_{3}-\hbox{InGaAs}$ MOS Devices

Yuan Yu, Lingquan Wang, Bo Yu et al. · IEEE Electron Device Letters · 2011 · 176 citations

Engineering, Integrated Circuits, Border Traps +16

Scaling of Nanowire Transistors

Bo Yu, Lingquan Wang, Yuan Yu et al. · IEEE Transactions on Electron Devices · 2008 · 143 citations

Device Modeling, Nanowire Transistors, Electrical Engineering +13

Design of Tunneling Field-Effect Transistors Based on Staggered Heterojunctions for Ultralow-Power Applications

Lingquan Wang, Edward T. Yu, Yuan Taur et al. · IEEE Electron Device Letters · 2010 · 135 citations

Semiconductor Technology, Iii-v-based Tunnel Heterojunctions, Electrical Engineering +13

A numerical Schrödinger–Poisson solver for radially symmetric nanowire core–shell structures

Lingquan Wang, Deli Wang, P.M. Asbeck · Solid-State Electronics · 2006 · 47 citations

Numerical Analysis, Method Of Fundamental Solution, One-dimensional Material +7