Semiconductor Science and Technology · 2014 · 15 citations · 34 references
EngineeringElectrical EngineeringMaterials ScienceMicroelectronicsSemiconductor DevicesSemiconductor MaterialsComplementary Metal-oxide-semiconductor TechnologyDevice CharacterizationHigh-frequency Semiconductor DevicesMetal-oxide-semiconductor Field-effect TransistorsNoise In Electronic DevicesNoise In Semiconductor DevicesDevice Noise CharacterizationDry EtchingGeneration-recombination NoiseInterface Trap DensityLow-frequency NoiseMosfet NoiseNoise In Field-effect TransistorsNoise In Metal-oxide-semiconductor Field-effect Transistors
Low-frequency noise has been used to study the impact of an Al2O3 work-function-engineering cap layer on the gate oxide quality of SiO2/HfO2 DRAM peripheral n- and pMOSFETs. It is shown that from the 1/f-like spectra a border trap density profile can be extracted, which depends on whether the cap is deposited below or above the HfO2 layer. In general, the presence of Al in the high-κ material leads to a higher trap density, with a maximum concentration close to or at the SiO2/HfO2 interface, where a dipole layer is expected to form. When removing the cap layer from the SiO2 interfacial layer, excess generation-recombination-like noise is introduced for the n-channel devices, indicating the presence of dry-etching damage at the SiO2/HfO2 interface.
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Improved Analysis of Low Frequency Noise in Field-Effect MOS Transistors
G. Ghibaudo, O. Roux, Ch. Nguyen-Duc et al. · physica status solidi (a) · 1991 · 759 citations