IEEE Electron Device Letters · 2002 · 11 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsCarrier TransportComplementary Metal-oxide-semiconductor TechnologyDopingP-n JunctionsSemiconductor HeterostructuresSemiconductor InterfacesChemical EtchingJunction Leakage CurrentLeak CurrentsLeakageSelective EtchingShallow Junction FormationSource-drain LeakageTransient Enhanced Diffusion
The leakage mechanism in p/sup +//n shallow junctions fabricated using Co silicidation and shallow trench isolation processes has been investigated using transmission electron microscopy (TEM) combined with selective chemical etching. TEM and TSUPREM-4 simulation results show that dopant profiles bend upward near the edge of the active region. The formation of the abnormal profile is attributed to transient enhanced diffusion induced by source/drain implantation. Based on the TEM and simulation results, it is suggested that the shallower junctions formed near the active edge can serve as a source for leakage current in the silicided p+ /n shallow junctions.
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Explanation of reverse short channel effect by defect gradients
C.S. Rafferty, H.-H. Vuong, S. A. Eshraghi et al. · 2002 · 72 citations
Engineering, Electrical Engineering, Electronic Materials +16