M. de Potter

Ni- and Co-based silicides for advanced CMOS applications

J. A. Kittl, A. Lauwers, O. Chamirian et al. · Microelectronic Engineering · 2003 · 114 citations

Engineering, Nanoelectronics, Applied Physics +6

Silicides for the 100-nm node and beyond: Co-silicide, Co(Ni)-silicide and Ni-silicide

A. Lauwers, M. de Potter, O. Chamirian et al. · Microelectronic Engineering · 2002 · 63 citations

Engineering, Physics, Natural Sciences +8

Self-aligned CoSi/sub 2/ for 0.18 μm and below

Karen Maex, A. Lauwers, Paul R. Besser et al. · IEEE Transactions on Electron Devices · 1999 · 55 citations

Engineering, Vlsi Design, Computer Architecture +17

Comparative study of Ni-silicide and Co-silicide for sub 0.25-μm technologies

A. Lauwers, Paul R. Besser, Tomasz Gutt et al. · Microelectronic Engineering · 2000 · 37 citations

Chemical Engineering, Engineering, Silicene +5

Quantitative prediction of junction leakage in bulk-technology CMOS devices

Ray Duffy, A. Heringa, V. C. Venezia et al. · Solid-State Electronics · 2009 · 24 citations

Device Modeling, Hardware Security, Electrical Engineering +5