Concepedia

Shallow Junction Formation

Shallow Junction Formation is a semiconductor fabrication process that belongs to the class of doping techniques in which dopant atoms are introduced into a silicon substrate via ion implantation to create highly localized, ultra-thin electrically active regions distinguished by their minimal depth and precise lateral control for advanced transistor performance.

319

Publications

8.8K

Citations

1.2K

Authors

246

Institutions

Publications per year

2017–2026

4

Parents

Publications

319

Transient enhanced diffusion of boron in Si

Sachin Jain, Wim Schoenmaker, Richard Lindsay et al. · Journal of Applied Physics · 2002 · 233 citations

, , +17

Germanium n-type shallow junction activation dependences

Chi On Chui, Leonard Kulig, Jean M. Moran et al. · Applied Physics Letters · 2005 · 177 citations

, , +17

Shallow junctions by high-dose As implants in Si: experiments and modeling

M. Y. Tsai, F. F. Morehead, J. E. E. Baglin et al. · Journal of Applied Physics · 1980 · 169 citations

, , +17

Optimization of the germanium preamorphization conditions for shallow-junction formation

Mehmet C. Öztürk, J. J. Wortman, C. M. Osburn et al. · IEEE Transactions on Electron Devices · 1988 · 117 citations

, , +17

A 40 nm gate length n-MOSFET

Mizuki Ono, M. Saito, T. Yoshitomi et al. · IEEE Transactions on Electron Devices · 1995 · 114 citations

, , +17

1–5 of 319

Authors

1.2K

  1. CM
    C. M. Osburn

    North Carolina State University, United States

    12 publications · 492 citations

    11

    h-index

  2. GA
    G. A. Rozgonyi

    North Carolina State University, United States

    7 publications · 389 citations

    7

    h-index

  3. ES
    Eddy Simoen

    IMEC, Belgium

    7 publications · 283 citations

    7

    h-index

  4. SB
    Susan B. Felch

    Varian Medical Systems (United States), United States

    7 publications · 181 citations

    7

    h-index

  5. TS
    T. Sarnet

    Centre National de la Recherche Scientifique, France

    6 publications · 143 citations

    6

    h-index

1–5 of 1.2K

Institutions

246

  1. North Carolina State University

    Raleigh, United States

    15 h-index

    63 publications

    2.9K citations

  2. Hitachi (Japan)

    Tokyo, Japan

    14 h-index

    71 publications

    1.8K citations

  3. IMEC

    Leuven, Belgium

    14 h-index

    87 publications

    4.2K citations

  4. National Yang Ming Chiao Tung University

    Hsinchu, Taiwan

    12 h-index

    49 publications

    1.2K citations

  5. NEC (Japan)

    Tokyo, Japan

    11 h-index

    38 publications

    814 citations

  6. The University of Texas at Austin

    Austin, United States

    11 h-index

    41 publications

    1K citations

  7. Varian Medical Systems (United States)

    Palo Alto, United States

    10 h-index

    23 publications

    590 citations

  8. University of California, Berkeley

    Berkeley, United States

    10 h-index

    30 publications

    753 citations

1–8 of 246

Venues

  1. IEEE Transactions on Electron Devices

    32 publications · 1.2K citations

    22

    h-index

  2. Journal of Applied Physics

    30 publications · 1.4K citations

    20

    h-index

  3. Applied Physics Letters

    34 publications · 973 citations

    17

    h-index

  4. IEEE Electron Device Letters

    23 publications · 500 citations

    14

    h-index

  5. Journal of The Electrochemical Society

    JES · 13 publications · 326 citations

    13

    h-index

1–5