Michael Current

Ion beams in silicon processing and characterization

Eric Chason, S. T. Picraux, J. M. Poate et al. · Journal of Applied Physics · 1997 · 271 citations

Materials Engineering, Electrical Engineering, Ion Implantation +12

Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review

Yao‐Jen Lee, Ta-Chun Cho, Shang-Shiun Chuang et al. · IEEE Transactions on Electron Devices · 2014 · 77 citations

Semiconductors, Materials Science, Electrical Engineering +14

Plasma immersion ion implantation of SiF4 and BF3 for sub-100 nm <i>P</i>+/<i>N</i> junction fabrication

Xueyu Qian, N.W. Cheung, M. A. Lieberman et al. · Applied Physics Letters · 1991 · 58 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +14

Direct observation of the primary state of damage of ion-irradiated tungsten. II. Definitions, analyses and results

Michael Current, Ching-Yeu Wei, David N. Seidman · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1983 · 56 citations

Materials Science, Electrical Engineering, Ion Implantation +14

Direct observation of the primary state of damage of ion-irradiated tungsten I. Three-dimensional spatial distribution of vacancies

Ching-Yeu Wei, Michael Current, David N. Seidman · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1981 · 56 citations · Full text

Extensive Field-ion Microscope, Engineering, Microscopy +17