Michael Current - Concepedia

Author

Michael Current

Also Known As

CURRENT, MI, M I Current, M. Current, M. I. Current, M.I Current, M.I. Current, MICHAEL I. CURRENT, Michael Ira Current, Michael Current, Michael I Current

409

Publications

1.7K

Citations

H-Index

Concepts

All Affiliations

Applied Materials (United States)University of California, Berkeley National Institutes of Applied Research National Yang Ming Chiao Tung University Cornell University

About

Michael Current is an author at Applied Materials (United States) specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	21	42	1.4K
2	Applied Physics	20	34	1.2K
3	Education	1	1	28
4	Natural Sciences	1	1	28
5	Biomedical Engineering	1	1	47

Michael Current

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Ion beams in silicon processing and characterization Eric Chason, S. T. Picraux, J. M. Poate, Journal of Applied Physics Materials EngineeringElectrical EngineeringIon ImplantationEngineeringMicrofabrication	1997	271
Low-Temperature Microwave Annealing Processes for Future IC Fabrication—A Review Yao‐Jen Lee, Ta-Chun Cho, Shang-Shiun Chuang, IEEE Transactions on Electron Devices SemiconductorsMaterials ScienceElectrical EngineeringSemiconductor TechnologyEngineering	2014	77
Plasma immersion ion implantation of SiF4 and BF3 for sub-100 nm <i>P</i>+/<i>N</i> junction fabrication Xueyu Qian, N.W. Cheung, M. A. Lieberman, Applied Physics Letters Semiconductor TechnologyElectrical EngineeringElectronic DevicesEngineeringIon Implantation	1991	58
Direct observation of the primary state of damage of ion-irradiated tungsten. II. Definitions, analyses and results Michael Current, Ching-Yeu Wei, David N. Seidman Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties Materials ScienceElectrical EngineeringIon ImplantationEngineeringPhysics	1983	56
Direct observation of the primary state of damage of ion-irradiated tungsten I. Three-dimensional spatial distribution of vacancies Ching-Yeu Wei, Michael Current, David N. Seidman Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties Extensive Field-ion MicroscopeEngineeringMicroscopyRadiation EffectIon Beam Instrumentation	1981	56
Characterization of Particulates from Power Plants Roger Cheng, Volker A. Mohnen, Thomas T. Shen, Journal of the Air Pollution Control Association Chemical EngineeringEnvironmental ChemistryEnvironmental MonitoringPower PlantEngineering	1976	53
Ion Implantation for Semiconductor Doping and Materials Modification Lawrence A. Larson, Justin Williams, Michael Current Reviews of Accelerator Science and Technology SemiconductorsMaterials EngineeringElectrical EngineeringMaterials ScienceDevice-based Approaches	2011	50
Ion implantation of advanced silicon devices: Past, present and future Michael Current Materials Science in Semiconductor Processing Ion ImplantationElectrical EngineeringEngineeringApplied PhysicsSemiconductor Device Fabrication	2016	48
Sub-100 mn p+/n junction formation using plasma immersion ion implantation Xueyu Qian, N.W. Cheung, M. A. Lieberman, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Materials EngineeringIon ImplantationEngineeringApplied PhysicsIon Beam	1991	47
A novel junctionless FinFET structure with sub-5nm shell doping profile by molecular monolayer doping and microwave annealing Y.-J. Lee, T.-C. Cho, Kuo-Hsing Kao, Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsElectronic Engineering	2014	41

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