Xueyu Qian

Characteristics and mechanism of etch process sensitivity to chamber surface condition

Songlin Xu, Zhiwen Sun, Xueyu Qian et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 66 citations

Engineering, Br Densities, Plasma Processing +17

Plasma immersion ion implantation of SiF4 and BF3 for sub-100 nm <i>P</i>+/<i>N</i> junction fabrication

Xueyu Qian, N.W. Cheung, M. A. Lieberman et al. · Applied Physics Letters · 1991 · 58 citations

Semiconductor Technology, Electrical Engineering, Electronic Devices +14

Sub-100 mn p+/n junction formation using plasma immersion ion implantation

Xueyu Qian, N.W. Cheung, M. A. Lieberman et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 1991 · 47 citations

Materials Engineering, Ion Implantation, Engineering +5

Pd/Si plasma immersion ion implantation for selective electroless copper plating on SiO2

Meng-Hsiung Kiang, M. A. Lieberman, N.W. Cheung et al. · Applied Physics Letters · 1992 · 38 citations

Engineering, Chemical Deposition, Silicon On Insulator +18

Spatial distributions of thin oxide charging in reactive ion etcher and MERIE etcher

Hang‐Sik Shin, Ko Noguchi, Xueyu Qian et al. · IEEE Electron Device Letters · 1993 · 36 citations

Engineering, Reactive Ion Etcher, Merie Etcher +16