IEEE Electron Device Letters · 1993 · 36 citations · 11 references
EngineeringElectrical EngineeringPhysicsElectrochemistryMicroelectronicsSemiconductor DevicesCurrent DistributionCurrent-voltage CharacteristicsElectric PotentialOhm's LawSurface ChargeCapacitorsCharge Distribution At InterfacesCurrent Density ProfilesOxide ChargePotential DistributionReactive Ion EtchingStatic Magnetic FieldSurface Charging
The spatial variation of the oxide charging across a wafer in a magnetically enhanced reactive ion etcher (MERIE) was investigated and compared with that in a reactive ion etcher (RIE). The polarity as well as the magnitude of the oxide charging current were determined by evaluating quasi-static CV curves for MOS capacitors. In a MERIE etcher with a static magnetic field, oxide charging is negative for about half of the wafer and positive for the other half of the wafer. A model is proposed to explain how lateral magnetic field affects the spatial distribution of charging across the wafer in a MERIE etcher.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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Thin oxide charging current during plasma etching of aluminum
Hang‐Sik Shin, C.-C. King, T. Horiuchi et al. · IEEE Electron Device Letters · 1991 · 106 citations