A novel MEMS silicon probe card

Abstract

We have developed a novel cantilever-type probe which is capable of less than 70 of pitch and 12g of force. This probe is suitable for wafer-level burn-in testing, function testing and circuit-board O/S testing including memory and RF devices. The probe was fabricated with epitaxial polysilicon on silicon substrate. The through via hole interconnection was formed in silicon wafer by nickel electroless plating and copper electroplating. The electroless plating is easy method and can deposit film uniformly for deep trench and through hole. Especially, it can deposit film on any substrates without seed layer and allow it to be electroplated. The aspect ratio of through via hole was larger than 10:1 and the contact resistance was less than 1 ohm.