2003 · 45 citations · 9 references
Device ModelingElectrical EngineeringPost-sbd DegradationEngineeringPost-sbd MosfetsPhysicsNanoelectronicsStress-induced Leakage CurrentBias Temperature InstabilityApplied PhysicsTime-dependent Dielectric BreakdownTime EvolutionSoft BreakdownGate LeakageMicroelectronicsPower ConsumptionSemiconductor Device
The post-SBD degradation of ultra-thin gate oxides is investigated by means of experiments, theoretical modeling, and computer simulations. The gate leakage current after SBD increases gradually, and is finally limited by the parasitic resistance. A newly developed model shows that the gate leakage increase of post-SBD MOSFETs even under operating conditions causes a significant impact on LSIs in terms of the power consumption.
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Point contact conduction at the oxide breakdown of MOS devices
J. Suñé, E. Miranda, M. Nafrı́a et al. · 2002 · 67 citations
Electrical Engineering, Sharvin Point Contact, Engineering +14