Hole Injection in Germanium-Quantitative Studies and Filamentary Transistors*

Abstract

Holes injected by an emitter point into thin single-crystal filaments of germanium can be detected by collector points. From studies of transient phenomena the drift velocity and lifetimes (as long as 140 microseconds) can be directly observed and the mobility measured. Hole concentrations and hole currents are measured in terms of the modulation of the conductivity produced by their presence. Filamentary transistors utilizing this modulation of conductivity are described.