Definition of dielectric breakdown for ultra thin (<2 nm) gate oxides

Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

Michel Depas, Bert Vermeire, Paul Mertens et al. · Solid-State Electronics · 1995 · 258 citations

Materials Science, Engineering, Tunneling Microscopy +8

Low-frequency noise in silicon-gate metal-oxide-silicon capacitors before oxide breakdown

Bruno Neri, P. Olivo, B. Riccò · Applied Physics Letters · 1987 · 90 citations

Electrical Engineering, Engineering, Tunneling Microscopy +15

Current fluctuations and silicon oxide wear-out in metal-oxide-semiconductor tunnel diodes

K. R. Farmer, Roberto Saletti, R. A. Buhrman · Applied Physics Letters · 1988 · 77 citations

Semiconductors, Silicon Oxide Wear-out, Electrical Engineering +14

Quantitative Analysis of Tunneling Current through Ultrathin Gate Oxides

Takeshi Yoshida, D. Imafuku, J. L. Alay et al. · Japanese Journal of Applied Physics · 1995 · 62 citations

Oxide Heterostructures, Sio 2, Electrical Engineering +14

Time-dependent positive charge generation in very thin silicon oxide dielectrics

K.R. Farmer, Mats O. Andersson, Olof Engström · Applied Physics Letters · 1992 · 49 citations

Dielectrics, Engineering, Semiconductor Physics +20