Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures

O. Ambacher, J. Smart, J. R. Shealy et al. · Journal of Applied Physics · 1999 · 2.9K citations

Engineering, Materials Engineering, Materials Science +17

Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy

I. P. Smorchkova, C. R. Elsass, J. P. Ibbetson et al. · Journal of Applied Physics · 1999 · 435 citations

Engineering, Materials Science, Physics +17

Stress evolution during metalorganic chemical vapor deposition of GaN

Sean Hearne, Eric Chason, Jung Han et al. · Applied Physics Letters · 1999 · 243 citations

Natural Sciences, Materials Engineering, Materials Science +17

The toughest transistor yet [GaN transistors]

L.F. Eastman, Umesh K. Mishra · IEEE Spectrum · 2002 · 231 citations

Engineering, Electrical Engineering, Materials Science +17

Gate leakage effects and breakdown voltage in metalorganic vapor phase epitaxy AlGaN/GaN heterostructure field-effect transistors

W. S. Tan, P. A. Houston, P. J. Parbrook et al. · Applied Physics Letters · 2002 · 117 citations

Engineering, Electrical Engineering, Materials Science +17