B. Albert

Effects of AlGaN/GaN HEMT structure on RF reliability

C. Lee, L. Witkowski, H.Q. Tserng et al. · Electronics Letters · 2005 · 63 citations

Engineering, Electrical Engineering, Materials Science +17

Effects of RF stress on power and pulsed IV characteristics of AlGaN/GaN HEMTs with field-plate gates

C. Lee, H.Q. Tserng, L. Witkowski et al. · Electronics Letters · 2004 · 25 citations

Engineering, Electrical Engineering, Materials Science +17

Time-dependent degradation of AlGaN/GaN heterostructures grown on silicon carbide

D. Gotthold, Shiping Guo, R. Birkhahn et al. · Journal of Electronic Materials · 2004 · 19 citations

Engineering, Materials Engineering, Materials Science +14

Microwave noise performances of AlGaN/GaN HEMTs on semi-insulating 6H-SiC substrates

J. W. Lee, V. Kumar, R. Schwindt et al. · Electronics Letters · 2004 · 17 citations

Engineering, Electrical Engineering, Materials Science +17

Parametric studies of III-nitride MOVPE in commercial vertical high-speed rotating disk reactors

A.V. Lobanova, K. Mazaev, E.V. Yakovlev et al. · Journal of Crystal Growth · 2004 · 12 citations

Engineering, Materials Engineering, Nuclear Engineering +3