R. Birkhahn

Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

Jason Heikenfeld, M. Garter, Dong‐Seon Lee et al. · Applied Physics Letters · 1999 · 271 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy

A. J. Steckl, R. Birkhahn · Applied Physics Letters · 1998 · 214 citations

Semiconductors, Electrical Engineering, Solid-state Lighting +15

Blue emission from Tm-doped GaN electroluminescent devices

A. J. Steckl, M. Garter, Dong‐Seon Lee et al. · Applied Physics Letters · 1999 · 156 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +10

AlGaN/GaN metal–oxide–semiconductor high electron mobility transistors using Sc2O3 as the gate oxide and surface passivation

R. Mehandru, B. Luo, J. Kim et al. · Applied Physics Letters · 2003 · 141 citations

Semiconductors, Oxide Heterostructures, Electrical Engineering +14

Investigation of micelle structure by fluorine magnetic resonance. I. Sodium 10,10,10-trifluorocaprate and related compounds

Norbert Müller, R. Birkhahn · The Journal of Physical Chemistry · 1967 · 135 citations

Engineering, Chemical Analysis, Magnetic Resonance +17