Dong‐Seon Lee

Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices

A. J. Steckl, Jason Heikenfeld, Dong‐Seon Lee et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2002 · 284 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +11

Red light emission by photoluminescence and electroluminescence from Eu-doped GaN

Jason Heikenfeld, M. Garter, Dong‐Seon Lee et al. · Applied Physics Letters · 1999 · 271 citations

Optical Materials, Engineering, Optoelectronic Devices +16

Blue emission from Tm-doped GaN electroluminescent devices

A. J. Steckl, M. Garter, Dong‐Seon Lee et al. · Applied Physics Letters · 1999 · 156 citations

Wide-bandgap Semiconductor, Room Temperature, Electrical Engineering +10

Spectral and time-resolved photoluminescence studies of Eu-doped GaN

Ei Ei Nyein, U. Hömmerich, Jason Heikenfeld et al. · Applied Physics Letters · 2003 · 134 citations

Eu-doped Gan, Optical Materials, Engineering +11

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique

Byung Oh Jung, Si‐Young Bae, Yoshihiro Kato et al. · CrystEngComm · 2014 · 97 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12