Si‐Young Bae - Concepedia

Author

Si‐Young Bae

Gwangju Institute of Science and Technology ORCID

Also Known As

S Y Bae, S. Y. Bae, S.-Y Bae, S.-Y. Bae, S.Y. Bae, Si-Young Bae, Si-Young Baé, Si‐Young Bae

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Gwangju Institute of Science and Technology Korea Institute of Ceramic Engineering and Technology Nagoya University Pusan National University Korea Photonics Technology Institute

About

Si‐Young Bae is an author at Gwangju Institute of Science and Technology specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	16	22	662
2	Applied Physics	16	22	662
3	Electrical Engineering	12	13	400
4	Materials Engineering	4	4	124
5	Chemical Engineering	1	1	39

Si‐Young Bae

Publications

892

Citations

H-Index

Page 1

	Year	Citations
Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique Byung Oh Jung, Si‐Young Bae, Yoshihiro Kato, CrystEngComm Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringNanotechnology	2014	97
Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy Xu Yang, Shugo Nitta, Kentaro Nagamatsu, Journal of Crystal Growth Materials ScienceMaterials EngineeringBoron NitrideEngineeringHexagonal Boron Nitride	2017	64
Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes Yoann Robin, Si‐Young Bae, T. V. Shubina, Scientific Reports EngineeringLeds CoversLuminescence PropertyNr TipsNanoelectronics	2018	62
Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region Byung Oh Jung, Si‐Young Bae, Sang Yun Kim, Nano Energy Wide-bandgap SemiconductorElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride	2014	55
The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation Jeong‐Hwan Park, Xu Yang, Jun Yeob Lee, Chemical Science	2021	43
Growth of 2-Inch α-Ga<sub>2</sub>O<sub>3</sub> Epilayers via Rear-Flow-Controlled Mist Chemical Vapor Deposition Kyoung‐Ho Kim, Minh‐Tan Ha, Yong‐Jin Kwon, ECS Journal of Solid State Science and Technology Materials ScienceChemical EngineeringEngineeringUpward FlowCrystal Growth Technology	2019	39
Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal–organic vapor deposition Si‐Young Bae, Byung Oh Jung, Kaddour Lekhal, CrystEngComm Materials ScienceAluminium NitrideEngineeringNanomaterialsNanotechnology	2016	38
Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode Byung Oh Jung, Si‐Young Bae, Seunga Lee, Nanoscale Research Letters	2016	38
Size-controlled InGaN/GaN nanorod array fabrication and optical characterization Si‐Young Bae, Duk‐Jo Kong, Jun Yeob Lee, Optics Express Materials ScienceElectrical EngineeringSolid-state LightingEngineeringNanotechnology	2013	37
Toward Large-Scale Ga<sub>2</sub>O<sub>3</sub> Membranes via Quasi-Van Der Waals Epitaxy on Epitaxial Graphene Layers Jung‐Hong Min, Kuang‐Hui Li, Yong‐Hyeon Kim, ACS Applied Materials & Interfaces	2021	33

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