Concepedia

Si‐Young Bae

SB

34

Publications

892

Citations

18

H-Index

2011

Active since

Affiliations

Gwangju Institute of Science and Technology(Current)

Korea Institute of Ceramic Engineering and Technology

Nagoya University

Pusan National University

Korea Photonics Technology Institute

Si‐Young Bae is an author at Gwangju Institute of Science and Technology specializing in engineering, applied physics, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceElectrical EngineeringOptoelectronicsNanoelectronicsNanotechnologySurface ScienceThin FilmsSolar Cells

Publications per year

2011–2023

34

Publications

34

Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique

Byung Oh Jung, Si‐Young Bae, Yoshihiro Kato et al. · CrystEngComm · 2014 · 97 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

Xu Yang, Shugo Nitta, Kentaro Nagamatsu et al. · Journal of Crystal Growth · 2017 · 64 citations

Materials Science, Materials Engineering, Boron Nitride +5

Insight into the performance of multi-color InGaN/GaN nanorod light emitting diodes

Yoann Robin, Si‐Young Bae, T. V. Shubina et al. · Scientific Reports · 2018 · 62 citations · Full text

Engineering, Leds Covers, Luminescence Property +16

Highly ordered catalyst-free InGaN/GaN core–shell architecture arrays with expanded active area region

Byung Oh Jung, Si‐Young Bae, Sang Yun Kim et al. · Nano Energy · 2014 · 55 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +4

The stability of graphene and boron nitride for III-nitride epitaxy and post-growth exfoliation

Jeong‐Hwan Park, Xu Yang, Jun Yeob Lee et al. · Chemical Science · 2021 · 43 citations · Full text

Rows per page

1–5 of 34