Kentaro Nagamatsu

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka et al. · Applied Physics Letters · 2018 · 181 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

Xu Yang, Shugo Nitta, Kentaro Nagamatsu et al. · Journal of Crystal Growth · 2017 · 64 citations

Materials Science, Materials Engineering, Boron Nitride +5

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Kentaro Nagamatsu, Narihito Okada, Hiroki Sugimura et al. · Journal of Crystal Growth · 2007 · 55 citations

Aluminium Nitride, Electrical Engineering, Engineering +5

Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact

Norio Tsuyukuchi, Kentaro Nagamatsu, Yoshikazu Hirose et al. · Japanese Journal of Applied Physics · 2006 · 34 citations

Wide-bandgap Semiconductor, Leakage Current Density, Electrical Engineering +7

Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE

Kentaro Nagamatsu, Narihito Okada, N. Kato et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2008 · 32 citations

Aluminium Nitride, Abstract Aln Layers, Engineering +17