Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka, +9

Applied Physics Letters

Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering +12

Growth of hexagonal boron nitride on sapphire substrate by pulsed-mode metalorganic vapor phase epitaxy

Xu Yang, Shugo Nitta, Kentaro Nagamatsu, +6

Journal of Crystal Growth

Materials ScienceMaterials EngineeringBoron NitrideEngineeringHexagonal Boron Nitride +3

High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

Kentaro Nagamatsu, Narihito Okada, Hiroki Sugimura, +8

Journal of Crystal Growth

Aluminium NitrideElectrical EngineeringEngineeringApplied PhysicsAluminum Gallium Nitride +3

Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact

Norio Tsuyukuchi, Kentaro Nagamatsu, Yoshikazu Hirose, +4

Japanese Journal of Applied Physics

Wide-bandgap SemiconductorLeakage Current DensityElectrical EngineeringEngineeringP-type Gan Gate +5

Effect of c‐plane sapphire misorientation on the growth of AlN by high‐temperature MOVPE

Kentaro Nagamatsu, Narihito Okada, N. Kato, +6

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Aluminium NitrideAbstract Aln LayersEngineeringCrystal Growth TechnologySolid-state Chemistry +15

Low interface state densities at Al2O3/GaN interfaces formed on vicinal polar and non-polar surfaces

Yuto Ando, Kentaro Nagamatsu, Manato Deki, +6

Applied Physics Letters

Wide-bandgap SemiconductorAluminium NitrideEngineeringNon-polar SurfacesVicinal Polar +14

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system

Kentaro Nagamatsu, Shugo Nitta, Zheng Ye, +4

physica status solidi (b)

Chemical EngineeringActual Movpe SystemsAdduct FormationEngineeringChemical Measurement +6

<i>m</i>‐Plane GaN Schottky Barrier Diodes Fabricated With MOVPE Layer on Several Off‐Angle <i>m</i>‐Plane GaN Substrates

Atsushi Tanaka, Yuto Ando, Kentaro Nagamatsu, +7

physica status solidi (a)

Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringLow Impurity Incorporation +5

Electrical properties of GaN metal-insulator-semiconductor field-effect transistors with Al2O3/GaN interfaces formed on vicinal Ga-polar and nonpolar surfaces

Yuto Ando, Kentaro Nagamatsu, Manato Deki, +6

Applied Physics Letters

SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesMis Channel +12

Crystal growth and p‐type conductivity control of AlGaN for high‐efficiency nitride‐based UV emitters

T. Mori, Kentaro Nagamatsu, Kentaro Nonaka, +5

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

Materials ScienceAluminium NitrideElectrical EngineeringWide-bandgap SemiconductorEngineering +12