Yuto Ando

Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate

Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka et al. · Applied Physics Letters · 2018 · 181 citations

Materials Science, Materials Engineering, Electrical Engineering +14

Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown

Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura et al. · Applied Physics Express · 2019 · 79 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +9

Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability

Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura et al. · Japanese Journal of Applied Physics · 2019 · 60 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +10

Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates

Shigeyoshi Usami, Atsushi Tanaka, Hayata Fukushima et al. · Japanese Journal of Applied Physics · 2019 · 40 citations · Full text

Materials Science, Screw Dislocation, Electrical Engineering +12

Experimental demonstration of GaN IMPATT diode at X-band

Seiya Kawasaki, Yuto Ando, Manato Deki et al. · Applied Physics Express · 2021 · 37 citations

Single Drift Diode, X-band Waveguide Circuit, Electrical Engineering +8