Concepedia
Statistics
Publications
16
Citations
655
H-Index
12
Active since
2017
Affiliations
Nagoya University(Current)
National Institute for Materials Science
The University of Osaka
Tohoku University
Kyoto Prefectural University
Shigeyoshi Usami is an author at Nagoya University specializing in semiconductor devices, engineering, and electronic materials.
Publications per year
2017–2024
Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate
Shigeyoshi Usami, Yuto Ando, Atsushi Tanaka et al. · Applied Physics Letters · 2018 · 190 citations
Engineering, Electrical Engineering, Materials Science +17
Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown
Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura et al. · Applied Physics Express · 2019 · 82 citations · Full text
Initial leakage current paths in the vertical-type GaN-on-GaN Schottky barrier diodes
Liwen Sang, Bing Ren, Masatomo Sumiya et al. · Applied Physics Letters · 2017 · 69 citations
Engineering, Electrical Engineering, Materials Engineering +17
Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability
Hayata Fukushima, Shigeyoshi Usami, Masaya Ogura et al. · Japanese Journal of Applied Physics · 2019 · 60 citations
Direct evidence of Mg diffusion through threading mixed dislocations in GaN p–n diodes and its effect on reverse leakage current
Shigeyoshi Usami, Norihito Mayama, Kazuya Toda et al. · Applied Physics Letters · 2019 · 59 citations
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