Applied Physics Letters · 2018 · 190 citations · 32 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsDislocations In SemiconductorsEtching ProcessesSemiconductor DefectsSemiconductor Device MaterialsWide-bandgap Semiconductor DevicesWide-bandgap SemiconductorsCathodoluminescence MicroscopyDislocationsEtch-induced DefectsEtchingGallium Nitride (Gan) MaterialsReverse Bias CharacteristicsScrew DislocationsTransmission Electron Microscopy Of Dislocations
Dislocations that cause a reverse leakage current in vertical p-n diodes on a GaN free-standing substrate were investigated. Under a high reverse bias, dot-like leakage spots were observed using an emission microscope. Subsequent cathodoluminescence (CL) observations revealed that the leakage spots coincided with part of the CL dark spots, indicating that some types of dislocation cause reverse leakage. When etch pits were formed on the dislocations by KOH etching, three sizes of etch pits were obtained (large, medium, and small). Among these etch pits, only the medium pits coincided with leakage spots. Additionally, transmission electron microscopy observations revealed that pure screw dislocations are present under the leakage spots. The results revealed that 1c pure screw dislocations are related to the reverse leakage in vertical p-n diodes.
32
Characterization of threading dislocations in GaN epitaxial layers
T. Hino, Shigetaka Tomiya, T. Miyajima et al. · Applied Physics Letters · 2000 · 400 citations
Vertical Power p-n Diodes Based on Bulk GaN
I.C. Kizilyalli, Andrew Edwards, Özgür Aktaş et al. · IEEE Transactions on Electron Devices · 2014 · 341 citations