High-efficiency AlGaN-based UV light-emitting diode on laterally overgrown AlN

An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

Yoshitaka Taniyasu, Makoto Kasu, Toshiki Makimōto · Nature · 2006 · 1.7K citations

Engineering, Materials Engineering, Materials Science +12

Transmission electron microscopy of defects in GaN films formed by epitaxial lateral overgrowth

Akira Sakai, Haruo Sunakawa, Akira Usui · Applied Physics Letters · 1998 · 205 citations

Natural Sciences, Materials Engineering, Materials Science +17

High-Temperature Metal-Organic Vapor Phase Epitaxial Growth of AlN on Sapphire by Multi Transition Growth Mode Method Varying V/III Ratio

Masataka Imura, Kiyotaka Nakano, Naoki Fujimoto et al. · Japanese Journal of Applied Physics · 2006 · 111 citations

Natural Sciences, Materials Engineering, Materials Science +15

AlGaN Deep-Ultraviolet Light-Emitting Diodes

Jianping Zhang, X. Hu, A. V. Lunev et al. · Japanese Journal of Applied Physics · 2005 · 108 citations

Engineering, Electrical Engineering, Materials Science +11

Dislocations in AlN Epilayers Grown on Sapphire Substrate by High-Temperature Metal-Organic Vapor Phase Epitaxy

Masataka Imura, Kiyotaka Nakano, Naoki Fujimoto et al. · Japanese Journal of Applied Physics · 2007 · 101 citations

Natural Sciences, Materials Engineering, Materials Science +17