Satoshi Kamiyama

Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

Shigefusa F. Chichibu, Akira Uedono, Takeyoshi Onuma et al. · Nature Materials · 2006 · 682 citations

Semiconductors, Materials Science, Aluminium Nitride +7

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

Kazuhito Ban, Junichi Yamamoto, Kenichiro Takeda et al. · Applied Physics Express · 2011 · 279 citations

Aluminium Nitride, Quantum Science, Electrical Engineering +15

Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes

Cyril Pernot, Myung‐Hee Y. Kim, Shinya Fukahori et al. · Applied Physics Express · 2010 · 257 citations

Al Composition, Photonics, Electrical Engineering +12

350.9 nm UV Laser Diode Grown on Low-Dislocation-Density AlGaN

Kazuyoshi Iida, Takeshi KAWASHIMA, Atsushi Miyazaki et al. · Japanese Journal of Applied Physics · 2004 · 163 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +8

Lateral Hydrogen Diffusion at p-GaN Layers in Nitride-Based Light Emitting Diodes with Tunnel Junctions

Yuka Kuwano, Mitsuru Kaga, Takatoshi Morita et al. · Japanese Journal of Applied Physics · 2013 · 125 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +14