Low-Leakage-Current Enhancement-Mode AlGaN/GaN Heterostructure Field-Effect Transistor Using p-Type Gate Contact

Abstract

An enhancement-mode AlGaN/GaN heterostructure field-effect transistor (HFET) using a p-type GaN gate was fabricated. Its leakage current density was 18.2 µA/mm at a gate–source bias of 0 V and a drain–source bias of 20 V, indicating a good pinched-off operation.