H.Q. Tserng

AlGaN/GaN HEMTs on Si substrate with 7 W/mm output power density at 10 GHz

D.C. Dumka, C. Lee, H.Q. Tserng et al. · Electronics Letters · 2004 · 75 citations

Effects of AlGaN/GaN HEMT structure on RF reliability

C. Lee, L. Witkowski, H.Q. Tserng et al. · Electronics Letters · 2005 · 62 citations

2.5 W CW X-band heterojunction bipolar transistor

B. Bayraktaroglu, R.D. Hudgens, Marziyeh Khatibzadeh et al. · IEEE MTT-S International Microwave Symposium digest · 2003 · 40 citations

Continuous Wave, Wide-bandgap Semiconductor, Electrical Engineering +8

Millimeter-wave power operation of an AlGaAs/InGaAs/GaAs quantum well MISFET

Bumman Kim, R. J. Matyi, M. Wurtele et al. · IEEE Transactions on Electron Devices · 1989 · 36 citations

Semiconductor Technology, Electrical Engineering, Ingaas Wells +10

High-performance double-recessed enhancement-mode metamorphic HEMTs on 4-in GaAs substrates

D.C. Dumka, H.Q. Tserng, Ming-Yih Kao et al. · IEEE Electron Device Letters · 2003 · 34 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +10